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FEATURES

LT5572 1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator DESCRIPTIO
The LT5572 is a direct I/Q modulator designed for high performance wireless applications, including wireless infrastructure. It allows direct modulation of an RF signal using differential baseband I and Q signals. It supports PHS, GSM, EDGE, TD-SCDMA, CDMA, CDMA2000, W-CDMA and other systems. It may also be configured as an image reject up-converting mixer by applying 90 phase-shifted signals to the I and Q inputs. The high impedance I/Q baseband inputs consist of voltage-to-current converters that in turn drive double-balanced mixers. The outputs of these mixers are summed and applied to an on-chip RF transformer which converts the differential mixer signals to a 50 single-ended output. The four balanced I and Q baseband input ports are intended for DC coupling from a source with a common mode voltage level of about 0.5V. The LO path consists of an LO buffer with single-ended input and precision quadrature generators that produce the LO drive for the mixers. The supply voltage range is 4.5V to 5.25V.
, LTC and LT are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.

Direct Conversion from Baseband to RF High Output: -2.5dB Conversion Gain High OIP3: +21.6dBm at 2GHz Low Output Noise Floor at 20MHz Offset: No RF: -158.6dBm/Hz POUT = 4dBm: -152.5dBm/Hz Low Carrier Leakage: -39.4dBm at 2GHz High Image Rejection: -41.2dBc at 2GHz 4-Channel W-CDMA ACPR: -67.7dBc at 2.14GHz Integrated LO Buffer and LO Quadrature Phase Generator 50 AC-Coupled Single-Ended LO and RF Ports High Impedance DC Interface to Baseband Inputs with 0.5V Common Mode Voltage 16-Lead QFN 4mm x 4mm Package
APPLICATIO S

Infrastructure Tx for DCS, PCS and UMTS Bands Image Reject Up-Converters for DCS, PCS and UMTS Bands Low Noise Variable Phase Shifter for 1.5GHz to 2.5GHz Local Oscillator Signals
TYPICAL APPLICATIO
Direct Conversion Transmitter Application
8, 13 14 I-DAC 16 V-I I-CH EN 1 Q-CH V-I 0 90 7 Q-DAC BASEBAND GENERATOR 5 BALUN 11 VCC LT5572 5V 100nF x2 RF = 1.5GHz TO 2.5GHz PA ACPR, AltCPR (dBc) -50
DOWNLINK TEST MODEL 64 DPCH 4-CH ACPR 4-CH AltCPR -60 2-CH ACPR
-70 2-CH AltCPR -80 1-CH AltCPR 2-CH NOISE 4-CH NOISE -90 -30 1-CH NOISE
5572 TA01a
2, 4, 6, 9, 10, 12, 15, 17
3 VCO/SYNTHESIZER
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W-CDMA ACPR, AltCPR and Noise vs RF Output Power at 2.14GHz for 1, 2 and 4 Channels
-125 NOISE FLOOR AT 30MHz OFFSET (dBm/Hz) 1-CH ACPR
-135
-145
-155
-25 -15 -10 -5 -20 RF OUTPUT POWER PER CARRIER (dBm)
5572 TA01b
-165
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LT5572 ABSOLUTE
(Note 1)
AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
TOP VIEW BBMI BBPI GND VCC
BBMQ
GND
BBPQ
UF PACKAGE 16-LEAD (4mm x 4mm) PLASTIC QFN TJMAX = 125C, JA = 37C/W EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB
ORDER PART NUMBER LT5572EUF
VCC
Supply Voltage .........................................................5.5V Common Mode Level of BBPI, BBMI and BBPQ, BBMQ.....................................................0.6V Voltage on Any Pin Not to Exceed ........................-500mV to (VCC + 500mV) Operating Ambient Temperature Range (Note 2).................................................... -40C to 85C Storage Temperature Range................... -65C to 125C
16 15 14 13 EN 1 GND 2 LO 3 GND 4 5 6 7 8 17 12 GND 11 RF 10 GND 9 GND
UF PART MARKING 5572
Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/ Consult LTC Marketing for parts specified with wider operating temperature ranges.
VCC = 5V, EN = High, TA = 25C, fLO = 2GHz, fRF = 2002MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, baseband input frequency = 2MHz, I and Q 90 shifted (upper sideband selection). PRF(OUT) = -10dBm, unless otherwise noted. (Note 3)
SYMBOL fRF S22(ON) S22(OFF) NFloor PARAMETER RF Frequency Range RF Output Return Loss RF Output Return Loss RF Output Noise Floor CONDITIONS -3dB Bandwidth -1dB Bandwidth EN = High (Note 6) EN = Low (Note 6) No Input Signal (Note 8) POUT = 4dBm (Note 9) POUT = 4dBm (Note 10) 20 * Log (VOUT(50)/VIN(DIFF) I or Q) 1VPP(DIFF) CW Signal, I and Q (Note 17) (Note 7) (Notes 13, 14) (Notes 13, 15) (Note 16) EN = High, PLO = 0dBm (Note 16) EN = Low, PLO = 0dBm (Note 16) MIN TYP 1.5 to 2.5 1.7 to 2.15 -13.5 -12.5 -158.6 -152.5 -152.2 -2.5 1.4 -29.5 9.3 53.2 21.6 -41.2 -39.4 -58 MAX UNITS GHz GHz dB dB dBm/Hz dBm/Hz dBm/Hz dB dBm dB dBm dBm dBm dBc dBm dBm RF Output (RF)
ELECTRICAL CHARACTERISTICS
GV POUT G3LO VS LO OP1dB OIP2 OIP3 IR LOFT
Conversion Voltage Gain Output Power 3 * LO Conversion Gain Difference Output 1dB Compression Output 2nd Order Intercept Output 3rd Order Intercept Image Rejection Carrier Leakage (LO Feedthrough)
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LT5572
VCC = 5V, EN = High, TA = 25C, fLO = 2GHz, fRF = 2002MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, baseband input frequency = 2MHz, I and Q 90 shifted (upper sideband selection). PRF(OUT) = -10dBm, unless otherwise noted. (Note 3)
SYMBOL LO Input (LO) fLO PLO S11(ON) S11(OFF) NFLO GLO IIP3LO BWBB VCMBB RIN IDC(IN) PLOBB IP1dB GI/Q I/Q VCC ICC(ON) ICC(OFF) tON tOFF Enable Sleep LO Frequency Range LO Input Power LO Input Return Loss LO Input Return Loss LO Input Referred Noise Figure LO to RF Small-Signal Gain LO Input 3rd Order Intercept Baseband Bandwidth DC Common Mode Voltage Differential Input Resistance Baseband Static Input Current Carrier Feedthrough to BB Input 1dB Compression Point I/Q Absolute Gain Imbalance I/Q Absolute Phase Imbalance Supply Voltage Supply Current Supply Current, Sleep Mode Turn-On Time Turn-Off Time Input High Voltage Input High Current Input Low Voltage EN = High EN = 0V EN = Low to High (Note 11) EN = High to Low (Note 12) EN = High EN = 5V EN = Low 1 230 0.5 0.25 1.3 4.5 (Note 4) POUT = 0 (Note 4) Differential Peak-to-Peak (Notes 7, 18) EN = High, PLO = 0dBm (Note 6) EN = Low (Note 6) at 2GHz (Note 5) at 2GHz (Note 5) at 2GHz (Note 5) -3dB Bandwidth Externally Applied (Note 4) -10 1.5 to 2.5 0 -15 -5.3 14.5 25 -0.5 460 0.5 90 -20 -39 2.8 0.07 0.9 5 120 5.25 145 50 0.6 5 GHz dBm dB dB dB dB dBm MHz V k A dBm VP-P(DIFF) dB Deg V mA A s s V A V PARAMETER CONDITIONS MIN TYP MAX UNITS
ELECTRICAL CHARACTERISTICS
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
Power Supply (VCC)
Enable (EN), Low = Off, High = On
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: Tests are performed as shown in the configuration of Figure 7. Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ. Note 5: VBBPI - VBBMI = 1VDC, VBBPQ - VBBMQ = 1VDC. Note 6: Maximum value within -1dB bandwidth. Note 7: An external coupling capacitor is used in the RF output line. Note 8: At 20MHz offset from the LO signal frequency. Note 9: At 20MHz offset from the CW signal frequency. Note 10: At 5MHz offset from the CW signal frequency.
Note 11: RF power is within 10% of final value. Note 12: RF power is at least 30dB lower than in the ON state. Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set in such a way that the two resulting RF tones are -10dBm each. Note 14: IM2 measured at LO frequency + 4.1MHz Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency + 2.2MHz. Note 16: Amplitude average of the characterization data set without image or LO feedthrough nulling (unadjusted). Note 17: The difference in conversion gain between the spurious signal at f = 3 * LO - BB versus the conversion gain of the desired signal at f = LO + BB for BB = 2MHz and LO = 2GHz. Note 18: The input voltage corresponding to the output P1dB.
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LT5572 TYPICAL PERFOR A CE CHARACTERISTICS
VCC = 5V, EN = High, TA = 25C, fLO = 2.14GHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, baseband input frequency fBB = 2MHz, I and Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = -10dBm (-10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) RF Output Power vs LO Frequency at 1VP-P Differential Baseband Drive
4 85C SUPPLY CURRENT (mA) 130 RF OUTPUT POWER (dBm) 2 VOLTAGE GAIN (dB) 0 -2 -4 -6 100 4.5 -8 1.3 0 -2 -4 -6 -8 -10 -12 1.3
Supply Current vs Supply Voltage
140
120
25C
110
-40C
5 SUPPLY VOLTAGE (V)
Output IP3 vs LO Frequency
26 24 22 OIP3 (dBm) OIP2 (dBm) 20 18 16 14 12 10 1.3 1.5 1.7 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 1.9 2.1 2.3 LO FREQUENCY (GHz) 2.5 2.7 fBB1 = 2MHz fBB2 = 2.1MHz 65
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OP1dB (dBm)
LO Feedthrough to RF Output vs LO Frequency
-35 -20 -25 LO FEEDTHROUGH (dBm) -40 P(2 * LO) (dBm) -30
P(3 * LO) (dBm)
-45
-50 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 1.3 1.5 1.7 1.9 2.1 2.3 LO FREQUENCY (GHz) 2.5 2.7
-55
-60
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5572 G01 5572 G04 5572 G07
Voltage Gain vs LO Frequency
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 1.5 2.3 1.7 1.9 2.1 LO FREQUENCY (GHz) 2.5 2.7
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 1.5 2.3 1.7 1.9 2.1 LO FREQUENCY (GHz) 2.5 2.7
5.5
5572 G02
5572 G03
Output IP2 vs LO Frequency
fIM2 = fBB1 + fBB2 + fLO fBB1 = 2MHz fBB2 = 2.1MHz 12 10 8 6 4 2
Output 1dB Compression vs LO Frequency
60
50
45 1.3
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 1.5 1.7 1.9 2.1 2.3 LO FREQUENCY (GHz) 2.5 2.7
0 1.3
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 1.5 2.3 1.7 1.9 2.1 LO FREQUENCY (GHz) 2.5 2.7
5572 G05
5572 G06
2 * LO Leakage to RF Output vs 2 * LO Frequency
-30 -35 -40 -45 -50 -55 -60 -65
3 * LO Leakage to RF Output vs 3 * LO Frequency
-35 -40 -45 -50 -55 -60 2.6 3 3.4 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 3.8 4.2 4.6 2 * LO FREQUENCY (GHz) 5 5.4
5572 G08
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 4.5 5.1 5.7 6.3 6.9 7.5 3 * LO FREQUENCY (GHz) 8.1
-70 3.9
5572 G09
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LT5572 TYPICAL PERFOR A CE CHARACTERISTICS
VCC = 5V, EN = High, TA = 25C, fLO = 2.14GHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, baseband input frequency fBB = 2MHz, I and Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = -10dBm (-10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) Noise Floor vs RF Frequency
-156 fLO = 2GHz (FIXED) -25 -30 IMAGE REJECTION (dBc) -35 S11 (dB) -20 -40 -45 -50 -55 1.3 LO PORT, EN = HIGH, PLO = -10dBm RF PORT, EN = HIGH, NO LO RF PORT, EN = LO RF PORT, EN = HIGH, PLO = 0dBm 2.5 2.7
-158 NOISE FLOOR (dBm/Hz)
-160
-162 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 1.3 1.5 1.7 1.9 2.1 2.3 RF FREQUENCY (GHz) 2.5 2.7
-164
-166
Absolute I/Q Gain Imbalance vs LO Frequency
0.2 ABSOLUTE I/Q GAIN IMBALANCE (dB) 5 ABSOLUTE I/Q PHASE IMBALANCE (DEG) 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C
VOLTAGE GAIN (dB)
0.1
0 1.3 1.5 1.7 1.9 2.1 2.3 LO FREQUENCY (GHz) 2.5 2.7
Output IP3 vs LO Power
22 20 LO FEEDTHROUGH (dBm) 18 16 OIP3 (dBm) 14 12 10 8 6 4 -20 -16 fBB1 = 2MHz fBB2 = 2.1MHz 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -12 -8 -4 0 LO INPUT POWER (dBm) 4 8 -30 -35 -40 -45 -50 -55
IMAGE REJECTION (dBc)
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5572 G10 5572 G16
Image Rejection vs LO Frequency
0
LO and RF Port Return Loss vs RF Frequency
LO PORT, EN = LOW -10 LO PORT, EN = HIGH, PLO = 0dBm
-30
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 1.5 1.7 1.9 2.1 2.3 LO FREQUENCY (GHz) 2.5 2.7
-40
-50 1.3 1.5
1.7 1.8 2.1 2.3 RF FREQUENCY (GHz)
5572 G11
5572 G12
Absolute I/Q Phase Imbalance vs LO Frequency
-2 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -4 -6 -8 -10 -12 -14 -16 0 1.3 1.5 1.7 1.9 2.1 2.3 LO FREQUENCY (GHz) 2.5 2.7
Voltage Gain vs LO Power
4
3
2
1
-18 -20 -16
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -12 -4 0 -8 LO INPUT POWER (dBm) 4 8
5572 G15
5572 G13
5572 G14
LO Feedthrough vs LO Power
-25 -30 -35 -40 -45 -50
Image Rejection vs LO Power
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C
-60 -20
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C -16 -4 0 -12 -8 LO INPUT POWER (dBm) 4 8
-55 -20
-16
-4 0 -12 -8 LO INPUT POWER (dBm)
4
8
5572 G17
5572 G18
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LT5572 TYPICAL PERFOR A CE CHARACTERISTICS
RF CW Output Power, HD2 and HD3 vs CW Baseband Voltage and Temperature
-10 RF -20 HD3 -30 HD2, HD3 (dBc) -40 -50 -60 -70 -80 0 1 HD2 -10 -20 0 -20 HD3 -30 HD2, HD3 (dBc) -40 -50 -60 -70 -80 0 1 HD2 -10 -20 RF CW OUTPUT POWER (dBm) 10 -10 RF 0 RF CW OUTPUT POWER (dBm) LO FEEDTHROUGH (dBm) -35
VCC = 5V, EN = High, TA = 25C, fLO = 2.14GHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, baseband input frequency fBB = 2MHz, I and Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = -10dBm (-10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) RF CW Output Power, HD2 and HD3 vs CW Baseband and Supply Voltage
10 -30
25C -30 85C -40C -40 HD2 = MAX POWER AT fLO + 2 * fBB OR fLO - 2 * fBB -50 HD3 = MAX POWER AT fLO + 3 * fBB OR fLO - 3 * fBB -60 2 3 5 4
5572 G19
I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
Image Rejection vs CW Baseband Voltage
-35 10 0 IMAGE REJECTION (dBc) -40 PLOAD (dBm) IM2, IM3 (dBc) -10
PLOAD (dBm) IM2, IM3 (dBc)
-45
-50
-55
5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 0 1 3 4 5 2 I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
5572 G22
Voltage Gain Distribution
35 30 PERCENTAGE (%) 25 20 15 10 5 0 -3.2 -2.8 -2.4 -2.0 -1.6 VOLTAGE GAIN (dB) -1.2
5572 G25
-40C 25C 85C
PERCENTAGE (%)
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LO Feedthrough to RF Output vs CW Baseband Voltage
-40
-30 5V 5.5V 4.5V -40 HD2 = MAX POWER AT fLO + 2 * fBB OR fLO - 2 * fBB -50 HD3 = MAX POWER AT fLO + 3 * fBB OR fLO - 3 * fBB -60 2 3 5 4
5572 G20
-45 5V, -40C 5V, 25C 5V, 85C 4.5V, 25C 5.5V, 25C 0 1 3 4 5 2 I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
5572 G21
-50
-55
I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
RF 2-Tone Power (Each Tone), IM2 and IM3 vs Baseband Voltage and Temperature
25C 85C -40C RF 10 0 -10
RF 2-Tone Power (Each Tone), IM2 and IM3 vs Baseband and Supply Voltage
5V 5.5V 4.5V RF
-20 IM2 = POWER AT fLO + 4.1MHz -30 IM3 = MAX POWER AT fLO + 1.9MHz -40 OR fLO + 2.2MHz -50 -60 -70
IM3
IM3 -20 IM2 = POWER AT fLO + 4.1MHz -30 IM3 = MAX POWER AT fLO + 1.9MHz -40 OR fLO + 2.2MHz -50 -60 -70 fBBI = 2MHz, 2.1MHz, 0 fBBQ = 2MHz, 2.1MHz, 90
IM2
IM2
fBBI = 2MHz, 2.1MHz, 0 fBBQ = 2MHz, 2.1MHz, 90
0.1 1 10 I AND Q BASEBAND VOLTAGE (VP-P,DIFF, EACH TONE)
5572 G23
1 10 0.1 I AND Q BASEBAND VOLTAGE (VP-P,DIFF, EACH TONE)
5572 G24
Noise Floor Distribution
fLO = 2GHz 40 35 -40C 25C 85C 30 fLO = 2GHz fNOISE = 2.02GHz 25 20 15 10 5 0 -159.4 -159 -158.6 -158.2 -157.8 5572 G26 NOISE FLOOR (dBm/Hz)
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LT5572 TYPICAL PERFOR A CE CHARACTERISTICS
VCC = 5V, EN = High, TA = 25C, fLO = 2.14GHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.5VDC, baseband input frequency fBB = 2MHz, I and Q 90 shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = -10dBm (-10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) LO Leakage Distribution
45 40 35 PERCENTAGE (%) 30 25 20 15 10 5 0 <-45 -43 -39 -37 LO LEAKAGE (dBm) -41 -35 -33
5572 G27
-40C 25C 85C
PERCENTAGE (%)
PI FU CTIO S
EN (Pin 1): Enable Input. When the EN pin voltage is higher than 1V, the IC is turned on. When the input voltage is less than 0.5V, the IC is turned off. GND (Pins 2, 4, 6, 9, 10, 12, 15, 17): Ground. Pins 6, 9, 15 and the Exposed Pad, Pin 17, are connected to each other internally. Pins 2 and 4 are connected to each other internally and function as the ground return for the LO signal. Pins 10 and 12 are connected to each other internally and function as the ground return for the on-chip RF balun. For best RF performance, Pins 2, 4, 6, 9, 10, 12, 15 and the Exposed Pad, Pin 17, should be connected to the printed circuit board ground plane. LO (Pin 3): LO Input. The LO input is an AC-coupled singleended input with approximately 50 input impedance at RF frequencies. Externally applied DC voltage should be within the range -0.5V to (VCC + 0.5V) in order to avoid turning on ESD protection diodes. BBPQ, BBMQ (Pins 7, 5): Baseband Inputs for the Q channel with about 90k differential input impedance. These pins should be externally biased at about 0.5V. Applied common mode voltage must stay below 0.6V. VCC (Pins 8, 13): Power Supply. Pins 8 and 13 are connected to each other internally. It is recommended to use 0.1F capacitors for decoupling to ground on each of these pins. RF (Pin 11): RF Output. The RF output is an AC-coupled single-ended output with approximately 50 output impedance at RF frequencies. Externally applied DC voltage should be within the range -0.5V to (VCC + 0.5V) in order to avoid turning on ESD protection diodes. BBPI, BBMI (Pins 14, 16): Baseband Inputs for the I channel with about 90k differential input impedance. These pins should be externally biased at about 0.5V. Applied common mode voltage must stay below 0.6V.
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Image Rejection Distribution
fLO = 2GHz 35 30 25 20 15 10 5 0 <-52 -40 -36 -44 -48 IMAGE REJECTION (dBc)
5572 G28
-40C 25C 85C
fLO = 2GHz
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LT5572 BLOCK DIAGRA W
VCC 8 BBPI 14 V-I BBMI 16 11 RF 0 90 BBPQ 7 BBMQ 5 V-I BALUN 1 EN 13 2 4 GND 6 9 3 LO 10 12 15 17
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APPLICATIO S I FOR ATIO
The LT5572 consists of I and Q input differential voltageto-current converters, I and Q up-conversion mixers, an RF output balun, an LO quadrature phase generator and LO buffers. External I and Q baseband signals are applied to the differential baseband input pins, BBPI, BBMI, and BBPQ, BBMQ. These voltage signals are converted to currents and translated to RF frequency by means of double-balanced up-converting mixers. The mixer outputs are combined in an RF output balun, which also transforms the output impedance to 50. The center frequency of the resulting RF signal is equal to the LO signal frequency. The LO input drives a phase shifter which splits the LO signal into in-phase and quadrature LO signals. These LO signals are then applied to on-chip buffers which drive the upconversion mixers. Both the LO input and RF output are single-ended, 50 matched and AC coupled. Baseband Interface The baseband inputs (BBPI, BBMI) and (BBPQ, BBMQ) present a differential input impedance of about 90k. At each of the four baseband inputs, a capacitor of 1.8pF to ground and a PNP emitter follower is incorporated (see Figure 1), which limits the baseband -1dB bandwidth to approximately 250MHz. The circuit is optimized for an externally applied common mode voltage of 0.5V. The baseband input pins should not be left floating because
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the internal PNP's base current will pull the common mode voltage higher than the 0.6V limit. This may damage the part if continued indefinitely. The PNP's base current is about 20A in normal operation. On the LT5572 demo board, external 50 resistors to ground are included at each baseband input to prevent this condition and to serve as a termination resistance for the baseband connections. The I/Q input signals to the LT5572 should be DC coupled with an applied common mode voltage level of about 0.5V in order to bias the LT5572 at its optimum operating point. Some I/Q test generators allow setting the common mode voltage independently. In this case, the common mode voltage of those generators must be set to 0.5V (See Figure 2). The baseband inputs should be driven differentially; otherwise, the even-order distortion products will degrade the overall linearity severely. Typically, a DAC will be the signal source for the LT5572. Reconstruction filters should be placed between the DAC outputs and the LT5572's baseband inputs. In Figure 3, a typical baseband interface is shown including a 5th-order lowpass ladder filter for reconstruction. For each baseband pin, a 0V to 1V swing is developed corresponding to a DAC output current of 0mA to 20mA. The maximum sinusoidal single sideband RF output power at 2.14GHz is about +6.2dBm for full 0V to 1V swing on each baseband
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LT5572 APPLICATIO S I FOR ATIO
LT5572 RF VCC = 5V BALUN FROM Q-CHANNEL LOMI LOPI C
BBPI VCM = 0.5V BBMI 1.8pF 1.8pF
Figure 1. Simplified Circuit Schematic of the LT5572 (Only I Channel is Drawn)
50 0.5VDC
+ -
1VDC GENERATOR
50
Figure 2. DC Voltage Levels for a Generator Programmed at 0.5VDC for a 50 Load Without and With the LT5572 as a Load
0mA TO 20mA R1A 100 DAC
L1A
L2A
0.5VDC
C1 R1B 100 L1B
C2 L2B
C3 R2B 100 BBMI
0mA TO 20mA GND
Figure 3. LT5572 Baseband Interface with 5th Order Filter and 0.5VCM DAC (Only I Channel is Shown)
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50 0.5005VDC
LT5572
+ -
1VDC GENERATOR
50 EXTERNAL LOAD
20ADC
5572 F02
LT5572 MAX RF +6.2dBm VCC 5V
C
BALUN FROM Q-CHANNEL LOMI LOPI
BBPI R2A 100 1.8pF 1.8pF
5572 F03
GND
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LT5572 APPLICATIO S I FOR ATIO
VCM (V) 0.1 0.2 0.3 0.4 0.5 0.6 ICC (mA) 77 89 101 113 126 138 GV (dB) -1.3 -2.7 -2.1 -2.0 -1.9 -1.9 OP1dB (dBm) 0.0 4.7 7.1 8.6 9.3 9.1
Table 1. Typical Performance Characteristics vs VCM for fLO = 2GHz, PLO = 0dBm
OIP2 (dBm) 47 45 49 51 52 52 OIP3 (dBm) 8.3 11.4 15.0 18.2 21.2 21.1 NFloor (dBm/Hz) -163.2 -162.2 -160.9 -160.2 -159.2 -158.6 LOFT (dBm) -45.6 -42.6 -42.0 -42.4 -42.4 -42.1 IR (dBc) -42.2 -36.2 -37.0 -39.3 -41.5 -44.4
input (2VP-P,DIFF). This maximum RF output level is limited by the 0.5VPEAK maximum baseband swing possible for a 0.5VDC common mode voltage level (assuming no extra negative supply voltage available). It is possible to bias the LT5572 to a common mode baseband voltage level other than 0.5V. Table 1 shows the typical performance for different common mode voltages. LO section The internal LO input amplifier performs single-ended to differential conversion of the LO input signal. Figure 4 shows the equivalent circuit schematic of the LO input. The internal, differential LO signal is split into in-phase and quadrature (90 phase shifted) signals that drive LO buffer sections. These buffers drive the double balanced I and Q mixers. The phase relationship between the LO input and the internal in-phase LO and quadrature LO signals is fixed, and is independent of start-up conditions. The phase shifters are designed to deliver accurate quadrature signals for an LO frequency near 2GHz. For frequencies significantly below 1.8GHz or above 2.4GHz, the quadrature accuracy will diminish, causing the image rejection
VCC LO INPUT 20pF
ZIN 56
5572 F04
Figure 4. Equivalent Circuit Schematic of the LO Input
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to degrade. The LO pin input impedance is about 50 and the recommended LO input power is 0dBm. For lower LO input power, the gain, OIP2, OIP3 and dynamic range will degrade, especially below -5dBm and at TA = 85C. For high LO input power (e.g., 5dBm), the LO feedthrough will increase, without improvement in linearity or gain. Harmonics present on the LO signal can degrade the image rejection, because they introduce a small excess phase shift in the internal phase splitter. For the second (at 4GHz) and third harmonics (at 6GHz) at -20dBc level, the introduced signal at the image frequency is about -57dBc or lower, corresponding to an excess phase shift much less than 1 degree. For the second and third harmonics at -10dBc, still the introduced signal at the image frequency is about -47dBc. Higher harmonics than the third will have less impact. The LO return loss typically will be better than 14dB over the 1.7GHz to 2.4GHz range. Table 2 shows the LO port input impedance vs frequency.
Table 2. LO Port Input Impedance vs Frequency for EN = High and PLO = 0dBm
FREQUENCY (MHz) 1000 1400 1600 1800 2000 2200 2400 2600 INPUT IMPEDANCE () 45.9+j15.7 60.8+j2.1 63.2-j6.0 61.8-j14.2 56.4-j16.8 51.7-j14.7 47.3-j11.3 42.5-j8.6 S11 Mag 0.167 0.099 0.128 0.163 0.165 0.144 0.119 0.122 Angle 95 9.4 -22 -44 -61 -75 -97 -126
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The input impedance of the LO port is different if the part is in shutdown mode. The LO input impedance for EN = Low is given in Table 3.
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LT5572 APPLICATIO S I FOR ATIO
FREQUENCY (MHz) 1000 1400 1600 1800 2000 2200 2400 2600 INPUT IMPEDANCE () 51.2+j45.6 133-j11.8 97.8-j65.8 58.6-j67.8 39.0-j55.6 29.6-j43.2 23.7-j30.8 19.7-j20.5 S11 Mag 0.409 0.456 0.502 0.534 0.540 0.527 0.506 0.503 Angle 64 -4.5 -30 -51 -69 -87 -108 -130
Table 3. LO Port Input Impedance vs Frequency for EN = Low and PLO = 0dBm
RF Section After up-conversion, the RF outputs of the I and Q mixers are combined. An on-chip balun performs internal differential to single-ended output conversion, while transforming the output signal impedance to 50. Table 4 shows the RF port output impedance vs frequency.
Table 4. RF Port Output Impedance vs Frequency for EN = High and PLO = 0dBm
FREQUENCY (MHz) 1000 1400 1600 1800 2000 2200 2400 2600 OUTPUT IMPEDANCE () 20.7+j9.9 32.2+j20.3 44.9+j21.8 56.4+j12.2 52.6+j0.5 43.0+j0.5 36.8+j5.6 32.9+j11.0 S22 Mag 0.434 0.319 0.230 0.129 0.025 0.075 0.164 0.243 Angle 153 117 90 56 10 176 153 140
The RF output S22 with no LO power applied is given in Table 5.
Table 5. RF Port Output Impedance vs Frequency for EN = High and No LO Power Applied
FREQUENCY (MHz) 1000 1400 1600 1800 2000 2200 2400 2600 OUTPUT IMPEDANCE () 21.2+j10.1 35.3+j18.4 46.1+j14.1 47.4+j5.0 42.0+j3.0 37.5+j6.8 34.8+j11.8 32.8+j16.1 S22 Mag 0.424 0.270 0.150 0.057 0.093 0.162 0.224 0.279 Angle 153 117 97 114 157 147 134 126
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For EN = Low the S22 is given in Table 6.
Table 6. RF Port Output Impedance vs Frequency for EN = Low
FREQUENCY (MHz) 1000 1400 1600 1800 2000 2200 2400 2600 OUTPUT IMPEDANCE () 20.3+j9.7 30.6+j20.2 41.8+j23.6 55.6+j18.5 58.3+j49.1 48.8-j0.1 40.4+j3.1 34.7+j8.3 S22 Mag 0.440 0.338 0.264 0.181 0.089 0.012 0.112 0.205 Angle 154 120 95 63 28 -172 160 146
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To improve S22 for lower frequencies, a shunt capacitor can be added to the RF output. At higher frequencies, a shunt inductor can improve the S22. Figure 5 shows the equivalent circuit schematic of the RF output. Note that an ESD diode is connected internally from the RF output to ground. For strong output RF signal levels (higher than 3dBm) this ESD diode can degrade the linearity performance if the 50 termination impedance is connected directly to ground. To prevent this, a coupling capacitor can be inserted in the RF output line. This is strongly recommended for 1dB compression measurements.
VCC 20pF
RF OUTPUT
52.59
2.1pF
3nH
5572 F05
Figure 5. Equivalent Circuit Schematic of the RF Output
Enable Interface Figure 6 shows a simplified schematic of the EN pin interface. The voltage necessary to turn on the LT5572 is 1V. To disable (shut down) the chip, the enable voltage must be below 0.5V. If the EN pin is not connected, the chip is disabled. This EN = Low condition is guaranteed by the 75k on-chip pull-down resistor. It is important that the voltage at the EN pin does not exceed VCC by more than 0.5V. If this should occur, the full-chip supply
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LT5572 APPLICATIO S I FOR ATIO
VCC EN 75k 25k
5572 F06
Figure 6. EN Pin Interface
current could be sourced through the EN pin ESD protection diodes, which are not designed for this purpose. Damage to the chip may result. Evaluation Board Figure 7 shows the evaluation board schematic. A good ground connection is required for the Exposed Pad. If this is not done properly, the RF performance will degrade. Additionally, the Exposed Pad provides heat sinking for the part and minimizes the possibility of the chip overheating. R1 (optional) limits the EN pin current in the
J1 BBIM R2 49.9 16 R1 100 VCC EN J4 LO IN 1 2 3 4 R5 49.9 15 14 13 C1 100nF J3 J2 BBIP VCC
BBPI VCC 12 EN GND 11 GND RF 10 LT5572 LO GND 9 GND GND 17 GND BBMQ GND BBPQ VCC 5 6 7 8 C2 100nF
BBMI GND
J5 BBQM R3 49.9 BOARD NUMBER: DC945A
J6 BBQP
R4 49.9
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Figure 7. Evaluation Circuit Schematic
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event that the EN pin is pulled high while the VCC inputs are low. The application board PCB layouts are shown in Figures 8 and 9.
Figure 8. Component Side of Evaluation Board
RF OUT
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Figure 9. Bottom Side of Evaluation Board
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LT5572 APPLICATIO S I FOR ATIO
Application Measurements The LT5572 is recommended for basestation applications using various modulation formats. Figure 10 shows a typical application. Figure 11 shows the ACPR performance for W-CDMA using 1-, 2- or 4-channel modulation. Figures 12, 13 and 14 illustrate the 1-, 2- and 4-channel W-CDMA
8, 13 14 I-DAC 16 V-I I-CH EN 1 Q-CH V-I 0 90 7 Q-DAC BASEBAND GENERATOR 5 BALUN 11 VCC LT5572
PA
ACPR, AltCPR (dBc)
2, 4, 6, 9, 10, 12, 15, 17
3 VCO/SYNTHESIZER
Figure 10. 1.5GHz to 2.4GHz Direct Conversion Transmitter Application
-30 -40 POWER IN 30kHz BW (dBm) -50 -60 -70 -80 -90
DOWNLINK TEST MODEL 64 DPCH POWER IN 30kHz BW (dBm)
-30 -40 -50 -60 -70 -80 -90
DOWNLINK TEST MODEL 64 DPCH POWER IN 30kHz BW (dBm)
SPECTRUM ANALYSER NOISE FLOOR UNCORRECTED SPECTRUM CORRECTED SPECTRUM
SPECTRUM ANALYSER NOISE FLOOR CORRECTED SPECTRUM
-100 -110 -120 2.1275 2.1325 2.1375 2.1425 2.1475 2.1525 RF FREQUENCY (GHz)
5572 F12
-100 -110 UNCORRECTED SPECTRUM -120 2.125 2.13 2.135 2.14 2.145 RF FREQUENCY (GHz) 2.15 2.155
Figure 12. 1-Channel W-CDMA Spectrum
Figure 13. 2-Channel W-CDMA Spectrum
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measurement. To calculate ACPR, a correction is made for the spectrum analyzer noise floor (Application Note 99). If the output power is high, the ACPR will be limited by the linearity performance of the part. If the output power is low, the ACPR will be limited by the noise performance of the part. In the middle, an optimum ACPR is obtained.
-50 5V 100nF x2 RF = 1.5GHz TO 2.5GHz DOWNLINK TEST MODEL 64 DPCH 4-CH ACPR 4-CH AltCPR -60 2-CH ACPR -125 NOISE FLOOR AT 30MHz OFFSET (dBm/Hz) 1-CH ACPR -135 -70 2-CH AltCPR -80 4-CH NOISE
5572 TA01a
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-145 1-CH AltCPR 2-CH NOISE 1-CH NOISE -165 -155
-90 -30
-25 -15 -10 -5 -20 RF OUTPUT POWER PER CARRIER (dBm)
5572 TA01b
Figure 11. W-CDMA ACPR, ALTCPR and Noise vs RF Output Power at 2140MHz for 1, 2 and 4 Channels
-30 -40 -50 -60 -70 -80 -90
DOWNLINK TEST MODEL 64 DPCH
SPECTRUM ANALYSER NOISE FLOOR
CORRECTED SPECTRUM
-100 -110 UNCORRECTED SPECTRUM -120 2.115 2.125 2.145 2.155 2.135 RF FREQUENCY (GHz) 2.165
5572 F13
5572 F14
Figure 14. 4-Channel W-CDMA Spectrum
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LT5572 APPLICATIO S I FOR ATIO
Because of the LT5572's very high dynamic range, the test equipment can limit the accuracy of the ACPR measurement. Consult the factory for advice on the ACPR measurement if needed. The ACPR performance is sensitive to the amplitude match of the BBIP and BBIM (or BBQP and BBQM) input voltage. This is because a difference in AC voltage amplitude will give rise to a difference in amplitude between the even-order harmonic products generated in the internal V-I converter.
-40 LO FEEDTHROUGH (dBm), IR (dB) CALIBRATED WITH PRF = -10dBm IMAGE REJECTION -60 VCC = 5V fBBI = 2MHz, 0 fBBQ = 2MHz, 90 fLO = 2GHz fRF = fBB + fLO EN = HIGH PLO = 0dB 60 80
5572 F15
PRF, LOFT (dBm), IR (dBc)
-50
-70
-80
LO FEEDTHROUGH
-90 -40
-20
0 20 40 TEMPERATURE (C)
Figure 15. LO Feedthrough and Image Rejection vs Temperature After Calibration at 25C
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As a result, they will not cancel out entirely. Therefore, it is important to keep the amplitudes at the BBIP and BBIM (or BBQP and BBQM) inputs as equal as possible. When the temperature is changed after calibration, the LO feedthrough and the image rejection performance will change. This is illustrated in Figure 15. The LO feedthrough and image rejection can also change as a function of the baseband drive level as depicted in Figure 16.
10 0 -10 -20 -30 -40 -50 -60 -70 -80 0 5 4 1 3 2 I AND Q BASEBAND VOLTAGE (VP-P(DIFF))
5572 F16
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PRF VCC = 5V fBBI = 2MHz, 0 fBBQ = 2MHz, 90 EN = HIGH LO FT fLO = 2GHz fRF = fBB + fLO EN = HIGH PLO = 0dB
IR
25C 85C -40C
Figure 16. RF Output Power, Image Rejection and LO Feedthrough vs Baseband Drive Voltage After Calibration at 25C
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LT5572 PACKAGE DESCRIPTIO U
UF Package 16-Lead Plastic QFN (4mm x 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 0.05 PACKAGE OUTLINE 0.30 0.05 0.65 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW--EXPOSED PAD 4.00 0.10 (4 SIDES) PIN 1 TOP MARK (NOTE 6) 2.15 0.10 (4-SIDES) 0.75 0.05 R = 0.115 TYP PIN 1 NOTCH R = 0.20 TYP OR 0.35 x 45 CHAMFER 15 16 0.55 0.20 1 2
(UF16) QFN 10-04
4.35 0.05 2.15 0.05 2.90 0.05 (4 SIDES)
0.200 REF 0.00 - 0.05 NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE
0.30 0.05 0.65 BSC
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Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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LT5572 RELATED PARTS
PART NUMBER Infrastructure LT5511 LT5512 LT5514 DESCRIPTION High Linearity Upconverting Mixer DC to 3GHz High Signal Level Downconverting Mixer COMMENTS RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer DC to 3GHz, 17dBm IIP3, Integrated LO Buffer 850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range 20dBm IIP3, Integrated LO Quadrature Generator 21.5dBm IIP3, Integrated LO Quadrature Generator 21dBm IIP3, Integrated LO Quadrature Generator 22.8dBm OIP3 at 2GHz, -158.2dBm/Hz Noise Floor, 50 Single-Ended RF and LO Ports, 4-Channel W-CDMA ACPR = -64dBc at 2.14GHz 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50 Matching, Single-Ended LO and RF Ports Operation 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50 Matching, Single-Ended LO and RF Ports Operation 24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO Port Operation 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50 Single-Ended RF and LO Ports 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control Single-Ended 50 RF and LO Ports, 17.6dBm IIP3 at 1900MHz, ICC = 28mA 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA, -65dBm LO-RF Leakage IIP3 = 23.5dBm and NF = 12.5dBm at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA 21.8dBm OIP3 at 2GHz, -159.3dBm/Hz Noise Floor, 50, 0.5VDC Baseband Interface, 4-Channel W-CDMA ACPR = -66dBc at 2.14GHz 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply 44dB Dynamic Range, Temperature Compensated, SC70 Package 36dB Dynamic Range, Low Power Consumption, SC70 Package Precision VOUT Offset Control, Shutdown, Adjustable Gain Precision VOUT Offset Control, Shutdown, Adjustable Offset Precision VOUT Offset Control, Adjustable Gain and Offset 1dB Output Variation over Temperature, 38ns Response Time, Log Linear Response 25ns Response Time, Comparator Reference Input, Latch Enable Input, -26dBm to +12dBm Input Range Low Frequency to 1GHz, 83dB Dynamic Range, 2.7V to 5.25V Supply Single 3.3V Supply, 910mW Consumption, 67.5dB SNR, 80dB SFDR, 775MHz Full Power BW Single 3V Supply, 222mW Consumption, 73dB SNR, 90dB SFDR Single 3V Supply, 395mW Consumption, 72.4dB SNR, 88dB SFDR, 640MHz Full Power BW
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Ultralow Distortion, IF Amplifier/ADC Driver with Digitally Controlled Gain LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator LT5517 40MHz to 900MHz Quadrature Demodulator LT5518 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer LT5521 10MHz to 3700MHz High Linearity Upconverting Mixer LT5522 600MHz to 2.7GHz High Signal Level Downconverting Mixer LT5524 Low Power, Low Distortion ADC Driver with Digitally Programmable Gain LT5525 High Linearity, Low Power Downconverting Mixer LT5526 High Linearity, Low Power Downconverting Mixer LT5527 400MHz to 3.7GHz High Signal Level Downconverting Mixer LT5528 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator RF Power Detectors LTC(R)5505 RF Power Detectors with >40dB Dynamic Range LTC5507 100kHz to 1000MHz RF Power Detector LTC5508 300MHz to 7GHz RF Power Detector LTC5509 300MHz to 3GHz RF Power Detector LTC5530 300MHz to 7GHz Precision RF Power Detector LTC5531 300MHz to 7GHz Precision RF Power Detector LTC5532 300MHz to 7GHz Precision RF Power Detector LT5534 50MHz to 3GHz Log RF Power Detector with 60dB Dynamic Range LTC5536 Precision 600MHz to 7GHz RF Power Detector with Fast Comparator Output LT5537 Wide Dynamic Range Log RF/IF Detector High Speed ADCs LTC2220-1 12-Bit, 185Msps ADC LTC2249 LTC2255 14-Bit, 80Msps ADC 14-Bit, 125Msps ADC
16 Linear Technology Corporation
(408) 432-1900 FAX: (408) 434-0507
LT 1205 * PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2005

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